Partial reprogramming of solid-state non-volatile memory cells

Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set is written to an associated initial programmed state. Drift in the programmed...

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Bibliographic Details
Main Authors VODDI VARUN, KHOUEIR ANTOINE, BOWMAN RODNEY VIRGIL
Format Patent
LanguageEnglish
Published 28.06.2016
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set is written to an associated initial programmed state. Drift in the programmed state of a selected memory cell in the set is detected, and the selected memory cell is partially reprogrammed to return the selected memory cell to the associated initial programmed state.
Bibliography:Application Number: US201313943441