Spacer replacement for replacement metal gate semiconductor devices

• Main Authors: PONOTH SHOM S, STANDAERT THEODORUS E, SANKARAPANDIAN MUTHUMANICKAM, YAMASHITA TENKO, MEHTA SANJAY C
• Format: Patent
• Language: English
• Published: 21.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method comprising steps of removing a first dielectric material, including a hard mask layer and one or more spacer material layers, from a semiconductor device having a sacrificial gate whose sidewalls being covered by said spacer material layers, and a raised source and a raised drain region with both, together with said sacrificial gate, being covered by said hard mask layer, wherein the removing is selective to the sacrificial gate, raised source region and raised drain region and creates a void between each of the raised source region, raised drain region and sacrificial gate. The method includes depositing a conformal layer of a second dielectric material to the semiconductor device, wherein the second material conforms in a uniform layer to the raised source region, raised drain region and sacrificial gate, and fills the void between each of the raised source region, raised drain region and sacrificial gate.