Semiconductor devices having tensile and/or compressive stress and methods of manufacturing

A semiconductor device and method of manufacturing is disclosed which has a tensile and/or compressive strain applied thereto. The method includes forming at least one trench in a material; and filling the at least one trench by an oxidation process thereby forming a strain concentration in a channe...

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Bibliographic Details
Main Authors BRYANT ANDRES, NOWAK EDWARD J, ANDERSON BRENT A, SPROGIS EDMUND J
Format Patent
LanguageEnglish
Published 14.06.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and method of manufacturing is disclosed which has a tensile and/or compressive strain applied thereto. The method includes forming at least one trench in a material; and filling the at least one trench by an oxidation process thereby forming a strain concentration in a channel of a device. The structure includes a gate structure having a channel and a first oxidized trench on a first of the channel, respectively. The first oxidized trench creates a strain component in the channel to increase device performance.
Bibliography:Application Number: US20080033280