Apparatus and method for e-beam writing
A method of preparing mask data, the method begins with performing a logic operation to a design layout, and an optical proximity correction (OPC) is performed to the design layout to form an OPC feature. The OPC feature has a first jog and a second jog on a line, and the first jog is larger than th...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English |
Published |
14.06.2016
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method of preparing mask data, the method begins with performing a logic operation to a design layout, and an optical proximity correction (OPC) is performed to the design layout to form an OPC feature. The OPC feature has a first jog and a second jog on a line, and the first jog is larger than the second jog in width. The OPC feature is resized to form a resized first jog and a resized second jog on the line if a width ratio of the first jog to the second jog being smaller than a predetermined value. |
---|---|
Bibliography: | Application Number: US201414477285 |