Apparatus and method for e-beam writing

A method of preparing mask data, the method begins with performing a logic operation to a design layout, and an optical proximity correction (OPC) is performed to the design layout to form an OPC feature. The OPC feature has a first jog and a second jog on a line, and the first jog is larger than th...

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Bibliographic Details
Main Authors JOU JIA-GUEI, TU CHIHIANG, LUO YIIUAN, TSAI CHI-MING, HUANG CHIHUNG
Format Patent
LanguageEnglish
Published 14.06.2016
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Summary:A method of preparing mask data, the method begins with performing a logic operation to a design layout, and an optical proximity correction (OPC) is performed to the design layout to form an OPC feature. The OPC feature has a first jog and a second jog on a line, and the first jog is larger than the second jog in width. The OPC feature is resized to form a resized first jog and a resized second jog on the line if a width ratio of the first jog to the second jog being smaller than a predetermined value.
Bibliography:Application Number: US201414477285