Confined resistance variable memory cells and methods

Methods, devices, and systems associated with resistance variable memory device structures can include a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion of the resistance variable material con...

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Bibliographic Details
Main Author BIAN ZAILONG
Format Patent
LanguageEnglish
Published 07.06.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
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Summary:Methods, devices, and systems associated with resistance variable memory device structures can include a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion of the resistance variable material contacts a bottom electrode and a second unmodified portion of the resistance variable material contacts a top electrode.
Bibliography:Application Number: US201314083069