Semiconductor device with charge carrier lifetime reduction means

A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of...

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Main Authors MAUDER ANTON, WERBER DOROTHEA, PFIRSCH FRANK, SCHAEFFER CARSTEN, SCHULZE HANS-JOACHIM, KOMARNITSKYY VOLODYMYR, SCHULZE HOLGER, MILLER GERHARD
Format Patent
LanguageEnglish
Published 07.06.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.
Bibliography:Application Number: US201313923436