Methods of using a two terminal multi-layer thin film resistance switching device with a diffusion barrier

An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electro...

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Bibliographic Details
Main Authors IGNATIEV ALEX, WU NAIJUAN, EBRAHIM RABI, YOUNG-FISHER KRISTINA
Format Patent
LanguageEnglish
Published 24.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
RESISTORS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.
Bibliography:Application Number: US201514939058