Dual damascene gap filling process

A method of forming a metallization layer in a semiconductor substrate includes forming a patterned dielectric layer on a substrate, the patterned dielectric layer having a plurality of first openings. A first conductive layer is formed in the plurality of first openings. A patterned mask layer is f...

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Bibliographic Details
Main Authors LEE HSIANG-HUAN, SHUE SHAU-LIN
Format Patent
LanguageEnglish
Published 17.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a metallization layer in a semiconductor substrate includes forming a patterned dielectric layer on a substrate, the patterned dielectric layer having a plurality of first openings. A first conductive layer is formed in the plurality of first openings. A patterned mask layer is formed over portions of the first conductive layer outside the plurality of first openings, the patterned mask layer having a plurality of second openings, wherein at least a subset of the second openings are disposed over the first openings. A second conductive layer is filled in the plurality of second openings. The patterned mask layer is removed to leave behind the conductive layer structures on the substrate. The substrate is heated to form a self-forming barrier layer on the top and sidewalls of the conductive layer structures.
Bibliography:Application Number: US201313802100