Adaptive endpoint method for pad life effect on chemical mechanical polishing

The present disclosure provides a chemical mechanical polishing (CMP) system. The CMP system includes a pad designed for wafer polishing, a motor driver coupled with the pad and designed to drive the pad during the wafer polishing, and a controller coupled with the motor driver and designed to contr...

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Bibliographic Details
Main Authors HUANG HUII, JANGJIAN PENGUNG, LEE CHU-AN
Format Patent
LanguageEnglish
Published 10.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATING SYSTEMS IN GENERAL
CONTROLLING
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
FUNCTIONAL ELEMENTS OF SUCH SYSTEMS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS
PERFORMING OPERATIONS
PHYSICS
POLISHING
REGULATING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:The present disclosure provides a chemical mechanical polishing (CMP) system. The CMP system includes a pad designed for wafer polishing, a motor driver coupled with the pad and designed to drive the pad during the wafer polishing, and a controller coupled with the motor driver and designed to control the motor driver. The CMP system further includes an in-situ rate monitor designed to collect polishing data from a wafer on the pad, determine CMP endpoint based on a life stage of the pad, and provide the CMP endpoint to the controller.
Bibliography:Application Number: US201313758658