Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)

A semiconductor substrate including a field effect transistor (FET) and a method of producing the same wherein a stressor is provided in a recess before the source/drain region is formed. The device has an increased carrier mobility in the channel region adjacent to the gate electrode.

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Bibliographic Details
Main Authors DORIS BRUCE B, FALTERMEIER JOHNATHAN E, HARAN BALASUBRAMANIAN S. PRANATHARTHI, ADAM LAHIR M. SHAIK
Format Patent
LanguageEnglish
Published 03.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor substrate including a field effect transistor (FET) and a method of producing the same wherein a stressor is provided in a recess before the source/drain region is formed. The device has an increased carrier mobility in the channel region adjacent to the gate electrode.
Bibliography:Application Number: US20100760688