Heat treatment apparatus for heating substrate by irradiating substrate with flash of light

Three support members made of silicon carbide are provided fixedly on an inner periphery of the support ring. The support members are inclined at an angle in the range of 15 to 30 degrees with respect to a horizontal plane. With an outer peripheral edge of a semiconductor wafer supported by the thre...

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Bibliographic Details
Main Authors NISHIHARA HIDEO, YOKOUCHI KENICHI
Format Patent
LanguageEnglish
Published 03.05.2016
Subjects
BAKERS' OVENS
BAKING
BASIC ELECTRIC ELEMENTS
BLASTING
DRYING
DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
EDIBLE DOUGHS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
HEATING
HUMAN NECESSITIES
LIGHTING
MACHINES OR EQUIPMENT FOR BAKING
MECHANICAL ENGINEERING
SEMICONDUCTOR DEVICES
WEAPONS
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Summary:Three support members made of silicon carbide are provided fixedly on an inner periphery of the support ring. The support members are inclined at an angle in the range of 15 to 30 degrees with respect to a horizontal plane. With an outer peripheral edge of a semiconductor wafer supported by the three support members, a heating treatment is performed by irradiating the semiconductor wafer with halogen light from halogen lamps. Silicon carbide absorbs the halogen light better than quartz. The support members support the outer peripheral edge of the semiconductor wafer in point contacting relationship, so that the contact between a holder and the semiconductor wafer is minimized. This minimizes the disorder of the temperature distribution of the semiconductor wafer due to the support members to achieve the uniform heating of the semiconductor wafer.
Bibliography:Application Number: US201313792419