Overlay metrology system and method

Overlay metrology systems are provided which include, for instance: a first metrology pattern including at least two first pairs of sub-patterns, at least one sub-pattern lacking 90 degree rotational symmetry, and a first center position for the first metrology pattern being determinable in an X-Y c...

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Bibliographic Details
Main Authors DAI XINTUO, YAN BINBIN
Format Patent
LanguageEnglish
Published 03.05.2016
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TESTING
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Summary:Overlay metrology systems are provided which include, for instance: a first metrology pattern including at least two first pairs of sub-patterns, at least one sub-pattern lacking 90 degree rotational symmetry, and a first center position for the first metrology pattern being determinable in an X-Y coordinate layout from the at least two first pairs of sub-patterns; and a second metrology including at least two second pairs of sub-patterns, at least one sub-pattern lacking 90 degree rotational symmetry, and a second center position for the second metrology pattern being determinable in the X-Y coordinate layout from the at least two second pairs of sub-patterns. Methods of making overlay metrology systems are also provided, which include, for instance, providing a first metrology pattern and a second metrology pattern, and arranging the metrology patterns in relation to each other within the X-Y coordinate layout.
Bibliography:Application Number: US201314084676