Method for forming through substrate vias with tethers

A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus...

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Bibliographic Details
Main Authors HARLEY JOHN C, YAO ZHIMIN J
Format Patent
LanguageEnglish
Published 26.04.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate. The substantially continuous annulus may be interrupted by at least one tether which connects the silicon post to the silicon substrate. The tether may be formed of a thing isthmus of silicon, or some suitable insulating material.
Bibliography:Application Number: US201514619068