High performance power cell for RF power amplifier

A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a depletion or Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the depletion...

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Bibliographic Details
Main Authors JIN JUN-DE, YEH TZU-JIN, JOU CHEWN-PU
Format Patent
LanguageEnglish
Published 19.04.2016
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a depletion or Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the depletion or Schottky MOSFET. The source node of the enhancement MOSFET and source node of the depletion or Schottky MOSFET are connected together to form the power cell.
Bibliography:Application Number: US201313937542