Correcting for stress induced pattern shifts in semiconductor manufacturing
Apparatus, method and computer program product for reducing overlay errors during a semiconductor photolithographic mask design process flow. The method obtains data representing density characteristics of a photo mask layout design; predicts stress induced displacements based on said obtained densi...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
12.04.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Apparatus, method and computer program product for reducing overlay errors during a semiconductor photolithographic mask design process flow. The method obtains data representing density characteristics of a photo mask layout design; predicts stress induced displacements based on said obtained density characteristics data; and corrects the mask layout design data by specifying shift movement of individual photo mask design shapes to pre-compensate for predicted displacements. To obtain data representing density characteristics, the method merges pieces of data that are combined to make a photo mask to obtain a full reticle field data set. The merge includes a merge of data representing density characteristic driven stress effects. The density characteristics data for the merged reticle data are then computed. To predict stress-induced displacements, the method inputs said density characteristics data into a programmed model that predicts displacements as a function of density, and outputs the predicted shift data. |
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Bibliography: | Application Number: US201414306715 |