Semiconductor device exhibiting reduced parasitics and method for making same

A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor.

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Bibliographic Details
Main Authors DORIS BRUCE B, HON-WONG KEITH KWONG, CHENG KANGGUO
Format Patent
LanguageEnglish
Published 01.03.2016
Subjects
Online AccessGet full text

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