Semiconductor device exhibiting reduced parasitics and method for making same
A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor.
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
01.03.2016
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!