Semiconductor device exhibiting reduced parasitics and method for making same
A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor.
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
01.03.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor. |
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Bibliography: | Application Number: US201213617575 |