Semiconductor device exhibiting reduced parasitics and method for making same
A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor.
Saved in:
| Main Authors | , , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
01.03.2016
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor. |
|---|---|
| AbstractList | A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor. |
| Author | HON-WONG KEITH KWONG DORIS BRUCE B CHENG KANGGUO |
| Author_xml | – fullname: DORIS BRUCE B – fullname: HON-WONG KEITH KWONG – fullname: CHENG KANGGUO |
| BookMark | eNqNizsKAjEURVNo4W8PbwOCjOAwraLYWI3WwzO54wTNS0iiuHwjuACrC-ecO1Uj8YKJOrVwVnsxT519JIOX1SC8B3u12cqNIoqCocCRU0E6EYshhzx4Q335OL5_w8QOczXu-ZGw-O1M0WF_3h2XCL5DCqwhyN2lbap6s6qbbbX-I_kA0-Q4FQ |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | US9276079B2 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US9276079B23 |
| IEDL.DBID | EVB |
| IngestDate | Fri Sep 06 06:12:02 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US9276079B23 |
| Notes | Application Number: US201213617575 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160301&DB=EPODOC&CC=US&NR=9276079B2 |
| ParticipantIDs | epo_espacenet_US9276079B2 |
| PublicationCentury | 2000 |
| PublicationDate | 20160301 |
| PublicationDateYYYYMMDD | 2016-03-01 |
| PublicationDate_xml | – month: 03 year: 2016 text: 20160301 day: 01 |
| PublicationDecade | 2010 |
| PublicationYear | 2016 |
| RelatedCompanies | HON-WONG KEITH KWONG DORIS BRUCE B CHENG KANGGUO GLOBALFOUNDRIES INC |
| RelatedCompanies_xml | – name: DORIS BRUCE B – name: GLOBALFOUNDRIES INC – name: HON-WONG KEITH KWONG – name: CHENG KANGGUO |
| Score | 3.0307977 |
| Snippet | A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device exhibiting reduced parasitics and method for making same |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160301&DB=EPODOC&locale=&CC=US&NR=9276079B2 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVbG-2IPkFkzbbbY5BCFJQxH6wLbSW0myW-ihm9Kk-Ped2T70ordlA8tmYF7JN98H8CI6bcGVlHbSVpnNOa68RHVsR6iFq4j-w7Dt9wdub8rfZ-1ZBZaHWRjDE_plyBHRozL099LE6_XPR6zIYCuL13SJW_lbPPEja98dk2Yy9sZR4HdHw2gYWmHoT8fW4MP3msJ1hBdgtD6hKppo9rufAQ2lrH9nlPgSTkd4mC6voKJ0Dc7Dg_BaDc76-__duNy7XnEN_THB2HNN_Kz5hklFLs4U6VsvCbrMNkTCqiQjMm8CYmUFS7RkO4lohrUpWxnlKVYkK3UDLO5Owp6N95ofbTCfjo9v0LqFqs61ugOGtZAUUnAPDYupFhvjFoYr2Wg2Fs6Cp04d6n8ec__Pswe4IGPusFaPUC03W_WEybdMn43ZvgHLZota |
| link.rule.ids | 230,309,786,891,25594,76904 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8JAEJ4QNOJNUSP42oPh1ligdOmhMemDVKVALBhupLBLwoGWtDX-fWeWh170ttlNNruTzMzO7rffB_DIux1uSCG0uCMXmmFgy4plV9O5XJqS6D8U2344MIOJ8TrtTEuw2v-FUTyhX4ocET1qgf5eqHi9-bnE8hS2Mn-ar7Arfe6Nba-xq45JMxlrY8-x_dHQG7oN17UnUWPwblstburccjBaH3GsCIlm3_9w6FPK5ndG6Z3B8QgnS4pzKMmkChV3L7xWhZNw996NzZ3r5RcQRgRjTxPiZ00zJiS5OJOkb70i6DLLiIRVCkZk3gTEWuQsTgTbSkQzPJuytVKeYnm8lpfAev7YDTRc1-xgg9kkOuygfQXlJE3kNTA8CwkuuGGhYTHVYmHcxnAlmq3mUl8ac70GtT-nqf8z9gCVYBz2Z_2XwdsNnJJht7irWygX2ae8w0RczO-VCb8BdlGORQ |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+exhibiting+reduced+parasitics+and+method+for+making+same&rft.inventor=DORIS+BRUCE+B&rft.inventor=HON-WONG+KEITH+KWONG&rft.inventor=CHENG+KANGGUO&rft.date=2016-03-01&rft.externalDBID=B2&rft.externalDocID=US9276079B2 |