Clamping circuit, a semiconductor apparatus including the same, and a clamping method of the semiconductor apparatus

A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of th...

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Bibliographic Details
Main Authors KO JAE-HYOK, CHO SANG-YOUNG, KIM WOO-SEOK, KIM HAN-GU
Format Patent
LanguageEnglish
Published 23.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
SEMICONDUCTOR DEVICES
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Summary:A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of the first high-voltage transistor, wherein the clamping circuit detects a change in a level of a gate voltage of the first high-voltage transistor due to electrostatic discharge, and clamps the gate voltage of the first high-voltage transistor according to a result of the detection.
Bibliography:Application Number: US201314016644