Ion implantation apparatus and method of determining state of ion implantation apparatus

• Main Authors: HATTORI KEI, NAGAMATSU TAKAHITO, JINGUUJI MASAYUKI, FUJITA KEIJI
• Format: Patent
• Language: English
• Published: 23.02.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

An ion implantation apparatus according to an embodiment includes an ion implantation unit, a position detection unit, a charge supply unit, a current value detection unit, and a determination unit. The ion implantation unit scans the surface of a substrate with an ion beam containing positively charged ions and implants the ions into the substrate. The position detection unit detects the scan position of the ion beam on the substrate. The charge supply unit generates a plasma, emits electrons contained in the plasma, and supplies the electrons to the substrate. The current value detection unit detects a current value that changes in accordance with the amount of electrons emitted by the charge supply unit. The determination unit determines the charge build-up state of the substrate based on a change in the current value, the change being accompanied by a change in the scan position.