Methods of singulating substrates to form semiconductor devices using dummy material

In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

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Bibliographic Details
Main Authors DENIFL GUENTER, STRANZL GUDRUN, KAHN MARKUS, ZGAGA MARTIN
Format Patent
LanguageEnglish
Published 09.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
Bibliography:Application Number: US201414260903