Measurement of critical dimension and scanner aberration utilizing metrology targets

Metrology targets and method of using the metrology targets for measurement of critical dimension, overlay or scanner aberration are disclosed. A target may include an unresolved grid having a plurality of lines spaced equally apart from each other according to a pre-determined pitch distance and at...

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Bibliographic Details
Main Authors MANASSEN AMNON, LOEVSKY BARRY
Format Patent
LanguageEnglish
Published 09.02.2016
Subjects
CALCULATING
COMPUTING
COUNTING
HANDLING RECORD CARRIERS
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
PRESENTATION OF DATA
RECOGNITION OF DATA
RECORD CARRIERS
TESTING
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Summary:Metrology targets and method of using the metrology targets for measurement of critical dimension, overlay or scanner aberration are disclosed. A target may include an unresolved grid having a plurality of lines spaced equally apart from each other according to a pre-determined pitch distance and at least one resolved feature tilted at an angle with respect to the unresolved grid. The method may indentify multiple regions of interest (ROIs) and determine a series of center points between the ROIs as the ROIs are being shifted. Critical dimension, overlay or scanner aberration may be calculated by analyzing the series of center points between the ROIs.
Bibliography:Application Number: US201414160217