Semiconductor structures with coplanar recessed gate layers and fabrication methods

Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a porti...

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Bibliographic Details
Main Authors KAMARTHY GOWRI, ORAIN ISABELLE, TREVINO KRISTINA, ZHANG XING, WONG HOONG SHING, LIU YUAN-HUNG, MAENG CHANG HO, HAN TAEJOON, WELLS GABRIEL PADRON, UPADHYAYA GANESH
Format Patent
LanguageEnglish
Published 02.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.
Bibliography:Application Number: US201414461887