Lateral double-diffused metal-oxide-semiconudctor transistor device and layout pattern for LDMOS transistor device

• Main Authors: CHANG KAING, CHOU KUN-YI, HUANG BO-JUI, LIN AN-HUNG, LIU HSIAO-WEN
• Format: Patent
• Language: English
• Published: 26.01.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region...