Lateral double-diffused metal-oxide-semiconudctor transistor device and layout pattern for LDMOS transistor device
A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English |
Published |
26.01.2016
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!