Lateral double-diffused metal-oxide-semiconudctor transistor device and layout pattern for LDMOS transistor device
A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
26.01.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region encompassing the source region, and a doped layer formed under the base region. The drain region and the source region include a first conductivity type, the base region and the doped layer include a second conductivity type, and the second conductivity type is complementary to the first conductivity type. A top of the doped layer contacts a bottom of the base region. A width of the doped layer is larger than a width of the base region. |
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Bibliography: | Application Number: US201414146012 |