EUV mirror comprising an oxynitride capping layer having a stable composition, EUV lithography apparatus, and operating method

• Main Authors: VON BLANCKENHAGEN GISELA, EHM DIRK HEINRICH
• Format: Patent
• Language: English
• Published: 05.01.2016
• Subjects: ACCESSORIES THEREFOR; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM; APPARATUS SPECIALLY ADAPTED THEREFOR; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; BLASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CINEMATOGRAPHY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTROGRAPHY; FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF; GAMMA RAY OR X-RAY MICROSCOPES; HEATING; HOLOGRAPHY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; IRRADIATION DEVICES; LIGHTING; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MECHANICAL ENGINEERING; METALLURGY; NANOTECHNOLOGY; NUCLEAR ENGINEERING; NUCLEAR PHYSICS; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; SPRAYING OR ATOMISING IN GENERAL; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR; TRANSPORTING; WEAPONS

A mirror (13) for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate (15) and a coating (16) reflective to EUV radiation (6), the reflective coating having a capping layer (18) composed of an oxynitride, in particular composed of SiNxOY, wherein a nitrogen proportion x in the oxynitride NxOY is between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror (13) and a method for operating such an EUV lithography apparatus.