Plasma processing method and plasma processing apparatus

• Main Authors: HSIEH JUIA, CHEN CHIH-HSUAN, HARADA AKITOSHI, YONEDA SHIGERU, LIN YEN-TING
• Format: Patent
• Language: English
• Published: 08.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a nickel-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing nickel, which is obtained by reducing the nickel-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).