Extraction of systematic defects

In one embodiment, a method for extracting systematic defects is provided. The method includes inspecting a wafer outside a process window to obtain inspection data, defining a defect pattern from the inspection data, filtering defects from design data using a pattern search for the defined defect p...

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Bibliographic Details
Main Authors HUANG TEIH, KE CHIH-MING, LIN HUA-TAI, HU JIA-RUI, GAU TSAI-SHENG
Format Patent
LanguageEnglish
Published 01.12.2015
Subjects
CALCULATING
COMPUTING
COUNTING
HANDLING RECORD CARRIERS
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
PRESENTATION OF DATA
RECOGNITION OF DATA
RECORD CARRIERS
TESTING
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Summary:In one embodiment, a method for extracting systematic defects is provided. The method includes inspecting a wafer outside a process window to obtain inspection data, defining a defect pattern from the inspection data, filtering defects from design data using a pattern search for the defined defect pattern within the design data, inspecting defects inside the process window with greater sensitivity than outside the process window, and determining systematic defects inside the process window. A computer readable storage medium, and a system for extracting systematic defects are also provided.
Bibliography:Application Number: US201113152135