Variable channel strain of nanowire transistors to improve drive current

• Main Authors: HSU YEH, YU TSUNG-HSING, LIU CHIA-WEN, COLINGE JEAN-PIERRE
• Format: Patent
• Language: English
• Published: 24.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device with variable channel strain is provided. The semiconductor device comprises a nanowire structure formed as a channel between a source region and a drain region. The nanowire structure has a first channel section subjected to a first strain level and joined with a second channel section subjected to a second strain level different from the first strain level. The first channel section is coupled adjacent to the drain region and the second channel section is coupled adjacent to the source region. The semiconductor device further comprises a gate region that has a first strain section and a second strain section. The first strain section is configured to cause the first channel section to be subjected to the first strain level and the second strain section is configured to cause the second channel section to be subjected to the second strain level.