High mobility, thin film transistors using semiconductor/insulator transition-metal dichalcogenide based interfaces

Electronic devices and methods of forming an electronic device are disclosed herein. An electronic device may include a first 2D atomic crystal layer; a second 2D atomic crystal layer disposed atop the first 2D atomic crystal layer; and an interface comprising van-der-Waals bonds between the first 2...

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Bibliographic Details
Main Author NAYFEH OSAMA M
Format Patent
LanguageEnglish
Published 17.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Electronic devices and methods of forming an electronic device are disclosed herein. An electronic device may include a first 2D atomic crystal layer; a second 2D atomic crystal layer disposed atop the first 2D atomic crystal layer; and an interface comprising van-der-Waals bonds between the first 2D atomic crystal layer and the second 2D atomic crystal layer. A method of forming an electronic device may include depositing a first 2D atomic crystal layer; and depositing a second 2D atomic crystal layer atop the first 2D atomic crystal layer; wherein an interface is formed between the first 2D atomic crystal layer and the second 2D atomic crystal layer via van-der-Waals bonding.
Bibliography:Application Number: US201313792332