Method for fabricating semiconductor device with loop-shaped fin
A fabrication method of a semiconductor device includes the following steps. First, sacrificial patterns are formed on a substrate and a space is formed on the sidewalls of each sacrificial pattern. Then, the sacrificial patterns are removed and patterns of the spacers are transferred into the subst...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
17.11.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A fabrication method of a semiconductor device includes the following steps. First, sacrificial patterns are formed on a substrate and a space is formed on the sidewalls of each sacrificial pattern. Then, the sacrificial patterns are removed and patterns of the spacers are transferred into the substrate to form a fin structure. The fin structure includes a horizontal fin structure extending along a first direction and a vertical fin structure extending along a second direction. Subsequently, a gate structure, source/drain structures, and an electrical connecting structure are formed sequentially on the substrate. The gate structure overlaps portions of the horizontal fin structure. The source/drain structures are respectively on each side of the gate structure. The electrical connecting structure directly covers the horizontal fin structure and the vertical fin structure. |
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Bibliography: | Application Number: US201514630666 |