Method for fabricating semiconductor device with loop-shaped fin

• Main Authors: TSAO POAO, HONG SHIH-FANG
• Format: Patent
• Language: English
• Published: 17.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A fabrication method of a semiconductor device includes the following steps. First, sacrificial patterns are formed on a substrate and a space is formed on the sidewalls of each sacrificial pattern. Then, the sacrificial patterns are removed and patterns of the spacers are transferred into the substrate to form a fin structure. The fin structure includes a horizontal fin structure extending along a first direction and a vertical fin structure extending along a second direction. Subsequently, a gate structure, source/drain structures, and an electrical connecting structure are formed sequentially on the substrate. The gate structure overlaps portions of the horizontal fin structure. The source/drain structures are respectively on each side of the gate structure. The electrical connecting structure directly covers the horizontal fin structure and the vertical fin structure.