Super junction semiconductor device and method for manufacturing the same

There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alterna...

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Bibliographic Details
Main Authors WOO HYUK, JUN KWANG YEON, CHOI CHANG YONG, CHO MOON SOO, KWON SOON TAK
Format Patent
LanguageEnglish
Published 17.11.2015
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Summary:There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.
Bibliography:Application Number: US201414242359