Semiconductor arrangement and formation thereof

A semiconductor arrangement and methods of formation are provided. The semiconductor arrangement includes a first contact having first contact dimensions that are relative to first gate dimensions of at least one of a first gate or a second gate, where relative refers to a specific relationship betw...

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Bibliographic Details
Main Authors YOUNG CHARLES CHEW-YUEN, SIO KAM-TOU, CHEN CHIH-LIANG, CHANG HELEN SHU-HUI, TZENG JIANN-TYNG, LIN WEING
Format Patent
LanguageEnglish
Published 10.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor arrangement and methods of formation are provided. The semiconductor arrangement includes a first contact having first contact dimensions that are relative to first gate dimensions of at least one of a first gate or a second gate, where relative refers to a specific relationship between the first contact dimensions and the first gate dimensions. The first contact is between the first gate and the second gate. The first contact having the first contact dimensions relative to the first gate dimensions has lower resistance with little to no increased capacitance, as compared to a semiconductor arrangement having first contact dimensions not in accordance with the specific relationship. The semiconductor arrangement having the lower resistance with little to no increased capacitance exhibits at least one of improved performance or reduced power requirements than a semiconductor arrangement that does not have such lower resistance with little to no increased capacitance.
Bibliography:Application Number: US201414289694