Deep trench structure for high density capacitor
Some embodiments relate to high density capacitor structures. Some embodiments include a semiconductor substrate having an conductive region with a plurality of trenches formed therein. A first dielectric layer is formed over respective bottom portions and respective sidewall portions of the respect...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
03.11.2015
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Subjects | |
Online Access | Get full text |
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