Deep trench structure for high density capacitor

• Main Authors: TSUI FELIX YING-KIT, YANG JING-HWANG, CHENG HSIN-LI, KALNITSKY ALEX, LIN JYUN-YING
• Format: Patent
• Language: English
• Published: 03.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Some embodiments relate to high density capacitor structures. Some embodiments include a semiconductor substrate having an conductive region with a plurality of trenches formed therein. A first dielectric layer is formed over respective bottom portions and respective sidewall portions of the respective trenches. A first conductive layer is formed in the trench and over the first dielectric layer, wherein the first dielectric layer acts as a first capacitor dielectric between the conductive region and the first conductive layer. A second dielectric layer is formed in the trench and over the first conductive layer. A second conductive layer is formed in the trench and over the second dielectric layer, wherein the second dielectric layer acts as a second capacitor dielectric between the first conductive layer and the second conductive layer. Other embodiments are also disclosed.