Ultraviolet light emitting device incorporating optically absorbing layers

A light emitting device includes a p-side, an n-side, and an active layer between the p-side and the n-side. The p-side includes a p-side contact, an electron blocking layer, a p-side separate confinement heterostructure (p-SCH), and a p-cladding/current spreading region disposed between the p-SCH a...

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Bibliographic Details
Main Author CHUA CHRISTOPHER L
Format Patent
LanguageEnglish
Published 27.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting device includes a p-side, an n-side, and an active layer between the p-side and the n-side. The p-side includes a p-side contact, an electron blocking layer, a p-side separate confinement heterostructure (p-SCH), and a p-cladding/current spreading region disposed between the p-SCH and the p-side contact. The n-side includes an n-side contact, and an n-side separate confinement heterostructure (n-SCH). The active layer is configured to emit light in a wavelength range, wherein the p-side and the n-side have asymmetrical optical transmission properties with respect to the wavelength range emitted by the active layer.
Bibliography:Application Number: US201414301315