Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: forming electrodes on a first major surface of a semiconductor substrate having first and second major surfaces facing in opposite directions; and forming a cleavage-inducing pattern on the first major surface of the semiconductor substrate....

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Bibliographic Details
Main Authors WATATANI CHIKARA, NEGISHI MASATO
Format Patent
LanguageEnglish
Published 27.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device includes: forming electrodes on a first major surface of a semiconductor substrate having first and second major surfaces facing in opposite directions; and forming a cleavage-inducing pattern on the first major surface of the semiconductor substrate. The cleavage-inducing pattern extends over a target cleavage position located between the electrodes, has a recess extending over the target cleavage position, and is made of a material different from the material of the semiconductor substrate. The method includes forming a scribed groove in the second major surface of the semiconductor substrate and in a position facing the target cleavage position; and cleaving the semiconductor substrate having the scribed groove and the cleavage-inducing pattern by applying pressure, through a cleaving blade, to the first major surface of the semiconductor substrate.
Bibliography:Application Number: US201414322970