High frequency capacitance-voltage nanoprobing characterization

• Main Authors: STANTON MATTHEW F, KANE TERENCE L, TENNEY MICHAEL P
• Format: Patent
• Language: English
• Published: 27.10.2015
• Subjects: APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]; BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; SCANNING-PROBE TECHNIQUES OR APPARATUS; TESTING

A method of generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure may include exposing first and second contact regions associated with the discrete device, coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer, and coupling the high-frequency impedance probe to a first and a second atomic force probe tip. Using an atomic force microscope, the first atomic force probe tip is coupled to the exposed first contact region and the second atomic force probe tip is coupled to the exposed second contact region. The C-V characteristic for the discrete device is then measured on the impedance analyzer, whereby the impedance analyzer applies an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions of the discrete device using the high-frequency impedance probe.