Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus
A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relat...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
20.10.2015
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect. |
---|---|
AbstractList | A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect. |
Author | NAKAYAMA HIDEO KOYAMA FUMIO KONDO TAKASHI TAKEDA KAZUTAKA |
Author_xml | – fullname: KOYAMA FUMIO – fullname: NAKAYAMA HIDEO – fullname: TAKEDA KAZUTAKA – fullname: KONDO TAKASHI |
BookMark | eNqNjksKwkAQRGehC3936ANEUAMRt4ri3s82NGOPDCQ9w3Qn4GU8qxFFXGZVi_eqqLEZcGAameeVknqLFVhsvT5AmuTQElDtVT3foUKhlEHbywOMERNqIxmE-CloQpbai_jA_xz5Bp5dSDXqG8UULHVWt_WzpmbosBKafXNi4LA_745ziqEkid0DJi0vp82yKPL1YrvKeygvjq1Xzg |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US9166370B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US9166370B23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 11:49:46 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US9166370B23 |
Notes | Application Number: US201213456909 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151020&DB=EPODOC&CC=US&NR=9166370B2 |
ParticipantIDs | epo_espacenet_US9166370B2 |
PublicationCentury | 2000 |
PublicationDate | 20151020 |
PublicationDateYYYYMMDD | 2015-10-20 |
PublicationDate_xml | – month: 10 year: 2015 text: 20151020 day: 20 |
PublicationDecade | 2010 |
PublicationYear | 2015 |
RelatedCompanies | NAKAYAMA HIDEO TOKYO INSTITUTE OF TECHNOLOGY KOYAMA FUMIO KONDO TAKASHI FUJI XEROX CO., LTD TAKEDA KAZUTAKA |
RelatedCompanies_xml | – name: TAKEDA KAZUTAKA – name: KONDO TAKASHI – name: FUJI XEROX CO., LTD – name: KOYAMA FUMIO – name: TOKYO INSTITUTE OF TECHNOLOGY – name: NAKAYAMA HIDEO |
Score | 2.996054 |
Snippet | A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
Title | Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151020&DB=EPODOC&locale=&CC=US&NR=9166370B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LS8NAEB5KFfWmVbG-2IPk1GLsZtP0EIQmLUXoA_ugt7K7SaBQktCk-m_8rc5u09qL4i3J7g6bGeaRycy3AE-sJahjRjaqOLXrVqSKAASTeCtFIETLEULlIfsDuze13uZsXoLlrhdG44R-anBE1CiJ-p5re53-JLF8XVuZPYslPkpeuxPXN4qvY3RfGP4YftvtjIb-0DM8z52OjcG7i1GQTZtmG631kYqiFcx-Z9ZWTSnpoUfpnsPxCInF-QWUwrgCp97u4LUKnPSL_914WahedglfM10BzVdEcnXeA8k26wi3TnCdrl0mGAeH6xr5-Nc8wlON-r3JaiRJtwty5bdwFyqBdjjO44AUAKuKMyTdNhcoWvtZV0C6nYnXq-OLLvZMXUzHe5bQayjHSRzeAGEhpU2HcxSVaUWcisAJWNBsSPkiJQtaVaj-Sub2j7E7OFPSUUa_Yd5DOV9vwgf05rl41HL4BsSOqww |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8JAEJ4QNOJNUSM-92B6glhZ-uDQmNBCUHlFHuFGdrdtQkJKQ4v-G3-rs0tBLhpv231MtjOZnel05luAB6POqa2HJqo4NSu1UCYBcEPgo-A-53WbcxmH7PbM9rj2OjWmOZhva2EUTuinAkdEjRKo76k6r-OfIJanciuTRz7HruVza-R4WvZ1jOYL3R_NazjNQd_ru5rrOuOh1nt30AsyqaU38LQ-sCQ4r_ScJg1ZlBLvW5TWCRwOkFiUnkIuiIpQcLcXrxXhqJv978ZmpnrJGXxNVAY0WxDB5H0PJFmvQtw6wXUqd5mgHxysyuTjX_MIixXq9zopk2W8WZBKu4W7kAG0_XEW-SQDWJWcIfGmuEDS2s06B9Jqjtx2BV90tmPqbDzcsYReQD5aRsElECOg1LIZQ1HptZBR7tu-4VtVIZ6EMPx6CUq_krn6Y-weCu1RtzPrvPTeruFYSkoagKp-A_l0tQ5u0bKn_E7J5Bvvf635 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Vertical+cavity+surface+emitting+laser%2C+vertical+cavity+surface+emitting+laser+apparatus%2C+optical+transmission+apparatus%2C+and+information+processing+apparatus&rft.inventor=KOYAMA+FUMIO&rft.inventor=NAKAYAMA+HIDEO&rft.inventor=TAKEDA+KAZUTAKA&rft.inventor=KONDO+TAKASHI&rft.date=2015-10-20&rft.externalDBID=B2&rft.externalDocID=US9166370B2 |