Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus
A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relat...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
20.10.2015
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect. |
---|---|
Bibliography: | Application Number: US201213456909 |