FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacers
A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define...
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English |
| Published |
20.10.2015
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer. |
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| AbstractList | A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer. |
| Author | HUNG YU-HSIANG FU SSU-I WU YEN-LIANG CHANG CHUNG-FU FAN CHO-HAN LIN CHIEN-TING |
| Author_xml | – fullname: FAN CHO-HAN – fullname: HUNG YU-HSIANG – fullname: FU SSU-I – fullname: WU YEN-LIANG – fullname: LIN CHIEN-TING – fullname: CHANG CHUNG-FU |
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| Notes | Application Number: US201314042190 |
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| Snippet | A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacers |
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