FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacers

A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define...

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Bibliographic Details
Main Authors FAN CHO-HAN, HUNG YU-HSIANG, FU SSU-I, WU YEN-LIANG, LIN CHIEN-TING, CHANG CHUNG-FU
Format Patent
LanguageEnglish
Published 20.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.
Bibliography:Application Number: US201314042190