FinFET gate with insulated vias and method of making same

An intermediate semiconductor structure of a FinFET device in fabrication includes a substrate, a plurality of fin structures coupled to the substrate and a dummy gate disposed perpendicularly over the fin structures. A portion of the dummy gate is removed between the fin structures to create one or...

Full description

Saved in:
Bibliographic Details
Main Authors YU HONG, MOON YONGSIK, ZHENG WANG, LIU HUANG
Format Patent
LanguageEnglish
Published 06.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An intermediate semiconductor structure of a FinFET device in fabrication includes a substrate, a plurality of fin structures coupled to the substrate and a dummy gate disposed perpendicularly over the fin structures. A portion of the dummy gate is removed between the fin structures to create one or more vias and the one or more vias are filled with a dielectric. The dummy gate is then replaced with a metal gate formed around the dielectric-filled vias.
Bibliography:Application Number: US201313917019