Tunnel magnetoresistive effect element and random access memory using same

Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enablin...

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Main Authors MIURA KATSUYA, OHNO HIDEO, KUROSAKI YOSUKE, YAMAMOTO HIROYUKI, IKEDA SHOJI
Format Patent
LanguageEnglish
Published 06.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.
Bibliography:Application Number: US201114356739