Compositions for etching and methods of forming a semiconductor device using the same

• Main Authors: JEONG CHANJIN, KIM KYUNGHYUN, HONG YOUNG TAEK, PARK SEONGHWAN, PARK JAEWAN, BAE SANG WON, KIM KYOUNGHWAN, HAN HOON, EOM DAEHONG, KO YONGSUN, MUN CHANGSUP, LEE JINUK, YOON BYOUNGMOON, LIM JUNGHUN, CHA SE-HO, LEE YANGHWA, JEONG JIHOON
• Format: Patent
• Language: English
• Published: 15.09.2015
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.