Semiconductor devices having through electrodes, semiconductor packages including the same, electronic systems including the same, and methods of manufacturing the same

A semiconductor device may include a substrate including a first surface and a second surface, a through electrode penetrating the substrate to include a protrusion that protrudes from the second surface of the substrate, and a front side bump electrically coupled to the through electrode and dispos...

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Bibliographic Details
Main Author YANG JU HEON
Format Patent
LanguageEnglish
Published 08.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device may include a substrate including a first surface and a second surface, a through electrode penetrating the substrate to include a protrusion that protrudes from the second surface of the substrate, and a front side bump electrically coupled to the through electrode and disposed on the first surface of the substrate. The semiconductor device may include a first passivation pattern disposed on the first surface of the substrate to substantially surround a sidewall of the front side bump and may be formed to include an uneven surface, and a second passivation pattern disposed on the second surface of the substrate to include an uneven surface. The protrusion of the through electrode may penetrate the second passivation pattern to protrude from the uneven surface of the second passivation pattern.
Bibliography:Application Number: US201514621140