Semiconductor devices including a stressor in a recess and methods of forming the same

• Main Authors: CHUNG HOI-SUNG, LEE CHUL-WOONG, SHIN DONG-SUK, SHIN GEO-MYUNG, KANG HYUNUL, ROH DONG-HYUN, LEE NAE-IN, PARK PAN-KWI, KIM YOUNG-TAK
• Format: Patent
• Language: English
• Published: 08.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.