Semiconductor integrated device including FinFET device and protecting structure

A semiconductor integrated device includes a substrate, a plurality of active fins, and a plurality of first protecting fins. The substrate includes an active region, and the active fins are positioned in the active region. The active region is surrounded by the first protecting fins. The active fin...

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Bibliographic Details
Main Authors TSAO POAO, HONG SHIH-FANG
Format Patent
LanguageEnglish
Published 01.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor integrated device includes a substrate, a plurality of active fins, and a plurality of first protecting fins. The substrate includes an active region, and the active fins are positioned in the active region. The active region is surrounded by the first protecting fins. The active fins and the first protecting fins all extend along a first direction.
Bibliography:Application Number: US201313920093