Semiconductor integrated device including FinFET device and protecting structure
A semiconductor integrated device includes a substrate, a plurality of active fins, and a plurality of first protecting fins. The substrate includes an active region, and the active fins are positioned in the active region. The active region is surrounded by the first protecting fins. The active fin...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
01.09.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor integrated device includes a substrate, a plurality of active fins, and a plurality of first protecting fins. The substrate includes an active region, and the active fins are positioned in the active region. The active region is surrounded by the first protecting fins. The active fins and the first protecting fins all extend along a first direction. |
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Bibliography: | Application Number: US201313920093 |