Epitaxial process

An epitaxial process includes the following steps. A substrate including a first area and a second area is provided. A first gate and a second gate are formed respectively on the substrate of the first area and the second area. A first spacer and a second spacer are respectively formed on the substr...

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Bibliographic Details
Main Authors TSAO POAO, LIANG CHIA-JUI
Format Patent
LanguageEnglish
Published 25.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An epitaxial process includes the following steps. A substrate including a first area and a second area is provided. A first gate and a second gate are formed respectively on the substrate of the first area and the second area. A first spacer and a second spacer are respectively formed on the substrate beside the first gate and the second gate at the same time. A first epitaxial structure is formed beside the first spacer and then a second epitaxial structure is formed beside the second spacer by the first spacer and the second spacer respectively.
Bibliography:Application Number: US201313756464