Enhancement mode gallium nitride based transistor device having a P type metal oxide layer comprising plurality of extension parts extending into the epitaxial stacked layer

Provided is an enhancement mode GaN-based transistor device including an epitaxial stacked layer disposed on a substrate; a source layer and a drain layer disposed on a surface of the epitaxial stacked layer; a p-type metal oxide layer disposed between the source layer and the drain layer; and a gat...

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Bibliographic Details
Main Authors LIN SUH-FANG, XUAN RONG, KUO WEI-HUNG
Format Patent
LanguageEnglish
Published 18.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is an enhancement mode GaN-based transistor device including an epitaxial stacked layer disposed on a substrate; a source layer and a drain layer disposed on a surface of the epitaxial stacked layer; a p-type metal oxide layer disposed between the source layer and the drain layer; and a gate layer disposed on the p-type metal oxide layer. Besides, the p-type metal oxide layer includes a body part disposed on the surface of the epitaxial stacked layer, and a plurality of extension parts connecting the body part and extending into the epitaxial stacked layer. With such structure, the enhancement mode GaN-based transistor device can effectively suppress generation of the gate leakage current.
Bibliography:Application Number: US201213686935